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Paper Title
Performance Analysis of Unilateral & Bilateral Methods of Microwave Amplifier Based On S-Parameters
  Vikrant Pradip Godse,  Mrs.A.A.Randive,  Mrs.Swati D.Rajvanshi

This paper presents design aspects of transistor Low Noise Amplifier. Microwave amplifier providing desired gain is designed with the help of smith chart & S- parameters based techniques using unilateral figure of merit &bilateral figure of merit methods. The aim of proposed work is to present two methods of microwave amplifier designing comparatively starting from S-parameters on the other hand to use one of the methodology either unilateral or bilateral whichever is applicable for designing & development of LNA operating at frequency range 3.3 GHz to 3.8GHz & noise figure targeted less than 2 dB while gain is more than 10 dB for Wimax application. Also for optimum performance two techniques i.e. Feedback &Balanced Amplifier are used. The proposed amplifier is designed and simulated using AWR Microwave Office, AppCAD & RFSim99 softwares.

Keywords- S-parameters,Gain,LNA,AWR,Wimax
Publication Details
Unique Identification Number - IJEDR1503045
Page Number(s) -
Pubished in - Volume 3 | Issue 3 | July 2015
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Vikrant Pradip Godse,  Mrs.A.A.Randive,  Mrs.Swati D.Rajvanshi,   "Performance Analysis of Unilateral & Bilateral Methods of Microwave Amplifier Based On S-Parameters", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.3, Issue 3, pp., July 2015, Available at :http://www.ijedr.org/papers/IJEDR1503045.pdf
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