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ISSN: 2321-9939 | ESTD Year: 2013

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Paper Title
Performance Analysis of Unilateral & Bilateral Methods of Microwave Amplifier Based On S-Parameters
Authors
  Vikrant Pradip Godse,  Mrs.A.A.Randive,  Mrs.Swati D.Rajvanshi

Abstract
This paper presents design aspects of transistor Low Noise Amplifier. Microwave amplifier providing desired gain is designed with the help of smith chart & S- parameters based techniques using unilateral figure of merit &bilateral figure of merit methods. The aim of proposed work is to present two methods of microwave amplifier designing comparatively starting from S-parameters on the other hand to use one of the methodology either unilateral or bilateral whichever is applicable for designing & development of LNA operating at frequency range 3.3 GHz to 3.8GHz & noise figure targeted less than 2 dB while gain is more than 10 dB for Wimax application. Also for optimum performance two techniques i.e. Feedback &Balanced Amplifier are used. The proposed amplifier is designed and simulated using AWR Microwave Office, AppCAD & RFSim99 softwares.

Keywords- S-parameters,Gain,LNA,AWR,Wimax
Publication Details
Unique Identification Number - IJEDR1503045
Page Number(s) -
Pubished in - Volume 3 | Issue 3 | July 2015
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Vikrant Pradip Godse,  Mrs.A.A.Randive,  Mrs.Swati D.Rajvanshi,   "Performance Analysis of Unilateral & Bilateral Methods of Microwave Amplifier Based On S-Parameters", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.3, Issue 3, pp., July 2015, Available at :http://www.ijedr.org/papers/IJEDR1503045.pdf
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