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Paper Details
Paper Title
Recovery method to mitigate the effect of NBTI on SRAM cells
Authors
Jai Viknesh Sankar Narayanan
Abstract
Abstract—NBTI stands for Negative Bias Temperature Instability. NBTI basically affects the parameter at the device level and hence affects the performance of the device. This paper explains what NBTI is and its effect on the SRAM cells while also dealing with the leakage current that is supposed to be one of the important factors affecting any circuit. Not just that but this paper also puts forth a method called recovery mode which explains a different approach to overcome this effect of NBTI on the 6T SRAM cell.
Keywords-
Publication Details
Unique Identification Number - IJEDR1504055Page Number(s) - 354-363Pubished in - Volume 3 | Issue 4 | November 2015DOI (Digital Object Identifier) - Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
Jai Viknesh Sankar Narayanan, "Recovery method to mitigate the effect of NBTI on SRAM cells", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.3, Issue 4, pp.354-363, November 2015, Available at :http://www.ijedr.org/papers/IJEDR1504055.pdf
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