Performance analysis of Carbon Nanotube Field Effect Transistor with Dual material Gate

  Manisha,  Vishal Ramola ,  Brijesh kumar

In current years, the development towards device miniaturization is done to increase the performance and to reduce inconsistency and power consumption of the circuit. It causes to the introduction of three-dimensional device channel structures for example cylindrical device structure. short channel effects are diminished by these structures. Scaling of device has been done in nanometer range. Improvement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be used in nanoscaled MOSFET (Metal Oxide Semiconductor FET). In this paper depth study of performance of DMG-CNTFET is done. These performance characteristics are compared with conventional CNTFET(C-CNTFET). Firstly we have discussed the carbon nanotube structure. Then Conventional CNTFET and Double metal gate CNTFET output and transfer characteristics are plotted. Simulation is done at 20 nanometer channel length. Performance parameters of DMG-CNTFET are extracted using Atlas 2-D by Silvaco Inc. It is a numerical device simulator.

Keywords- C-CNTFET (conventional carbon nanotube field effect transistor), DMG-CNTFET (Dual material gate CNTFET) , Atlas TCAD simulator.

Unique Identification Number - IJEDR1603054
Page Number(s) - 340-344
Pubished in - Volume 4 | Issue 3 | July 2016
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)

  Manisha,  Vishal Ramola ,  Brijesh kumar ,   "Performance analysis of Carbon Nanotube Field Effect Transistor with Dual material Gate", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.4, Issue 3, pp.340-344, July 2016, Available at :http://www.ijedr.org/papers/IJEDR1603054.pdf