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INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH
(International Peer Reviewed,Refereed, Indexed, Citation Open Access Journal)
ISSN: 2321-9939 | ESTD Year: 2013

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Paper Title
Analysis of Temperature Effect on MOSFET Parameter using MATLAB
Authors
  Jitty Jose,  Keerthi K nair,  Ajith Ravindran

Abstract
It is well known that the device performance and characteristics are influence by change in operating temperature. Proper description of temperature effects in a device is essential for a circuit level MOSFET model to predict circuit behavior over a wide range of temperature. To perform high temperature application, proper understanding of temperature dependent parameter in MOSFET is critical. In a MOSFET model , there are many temperature dependent parameters such as bandgap, carrier mobility, threshold voltage, subthreshold leakage current, drain to source ON resistance, contact region resistance, saturation velocity etc. All of this parameters need to be modelled correctly. This paper deals with analysis of temperature effect on some of the MOSFET parameters like bandgap, carrier mobility, saturation velocity and contact region resistance. The analysis of all the effect are done by using mathematical simulation. The overall impact of these parameters on the characteristics of the MOSFET have been analyzed

Keywords- MOSFET, Temperature dependence parameter, mathematical modelling, device simulation
Publication Details
Unique Identification Number - IJEDR1603087
Page Number(s) - 530-535
Pubished in - Volume 4 | Issue 3 | August 2016
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Jitty Jose,  Keerthi K nair,  Ajith Ravindran,   "Analysis of Temperature Effect on MOSFET Parameter using MATLAB", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.4, Issue 3, pp.530-535, August 2016, Available at :http://www.ijedr.org/papers/IJEDR1603087.pdf
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