Design of transparent a-IGZO thin film transistor for AMOLED display

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Paper Details

Paper Title

Design of transparent a-IGZO thin film transistor for AMOLED display

Authors

S.Suruthi, K.Srinidhi, Rajat kumar dwibedi

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Abstract

Thin-ﬁlm transistor(TFT) are key elements for next generation high resolution displays.Transparent amorphous oxide semiconductors especially a-InGaZnO are the most recent TFT materials of interest for driving active matrix displays.In this paper we designed indium-gallium-zinc oxide (a-IGZO) TFT with highly transparent and multilayered gate electrodes using SILVACO TCAD Software which results in reduced RC delay and reduce power consumption by controlling threshold voltage.we obtain threshold voltage of 0.5V and mobility of 11.57 cm2/(V•s).

Keywords- Thin-film transistor,a-IGZO,RC delay,multilayered gate electrode.

Publication Details

Unique Identification Number - IJEDR1701115
Page Number(s) - 726-731
Pubished in - Volume 5 | Issue 1 | March 2017
DOI (Digital Object Identifier) -
Publisher - IJEDR (ISSN - 2321-9939)

Cite this Article

S.Suruthi, K.Srinidhi, Rajat kumar dwibedi, "Design of transparent a-IGZO thin film transistor for AMOLED display", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.5, Issue 1, pp.726-731, March 2017, Available at :http://www.ijedr.org/papers/IJEDR1701115.pdf

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