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Preparation and Characterization of Copper Oxide Thin film by SILAR Method
Chetan R. Yewale,  Mangesh B. Deore,  Upendra D. Lad
Nanocrystalline copper oxide thin film was fabricated by successive ionic layer adsorption and response (silar) approach. The copper oxide thin film was deposited on corning glass substrate at room temperature. The present work is aimed at studying the behaviour of copper oxide thin film which was annealed at 450 0C temperature for 2 hours in air atmosphere then its electrical characteristics was measured and its effect is discussed in this paper. The DC resistance of the film was measured by half bridge method in air condition at different temperature ( Between 40 0C to 350 0C). Film shows increase in temperature with decrease in resistance of film indicating semiconductor behaviour. The TCR, activation energy, specific resistance of film was evaluated at 450 0C. Thickness of the film was measured by gravimetric method.
Keywords- Silar, CuO, Thickness, Activation energy, UV, IR.
Unique Identification Number - IJEDR2101028Page Number(s) - 210-213Pubished in - Volume 9 | Issue 1 | January 2021DOI (Digital Object Identifier) -    Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
Chetan R. Yewale,  Mangesh B. Deore,  Upendra D. Lad,   "Preparation and Characterization of Copper Oxide Thin film by SILAR Method"
, International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.9, Issue 1, pp.210-213, January 2021, Available at :http://www.ijedr.org/papers/IJEDR2101028.pdf