Low Cost Journal,International Peer Reviewed and Refereed Journals,Fast Paper Publication approved journal IJEDR(ISSN 2321-9939) apply for ugc care approved journal, UGC Approved Journal, ugc approved journal, ugc approved list of journal, ugc care journal, care journal, UGC-CARE list, New UGC-CARE Reference List, UGC CARE Journals, ugc care list of journal, ugc care list 2020, ugc care approved journal, ugc care list 2020, new ugc approved journal in 2020, Low cost research journal, Online international research journal, Peer-reviewed, and Refereed Journals, scholarly journals, impact factor 7.37 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool)
INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH
(International Peer Reviewed,Refereed, Indexed, Citation Open Access Journal)
ISSN: 2321-9939 | ESTD Year: 2013

Current Issue

Call For Papers
July 2022

Volume 10 | Issue 3
Last Date : 29 July 2022
Review Results: Within 12-20 Days

For Authors

Archives

Indexing Partner

Research Area

LICENSE

Paper Details
Paper Title
Preparation and Characterization of Copper Oxide Thin film by SILAR Method
Authors
  Chetan R. Yewale,  Mangesh B. Deore,  Upendra D. Lad

Abstract
Nanocrystalline copper oxide thin film was fabricated by successive ionic layer adsorption and response (silar) approach. The copper oxide thin film was deposited on corning glass substrate at room temperature. The present work is aimed at studying the behaviour of copper oxide thin film which was annealed at 450 0C temperature for 2 hours in air atmosphere then its electrical characteristics was measured and its effect is discussed in this paper. The DC resistance of the film was measured by half bridge method in air condition at different temperature ( Between 40 0C to 350 0C). Film shows increase in temperature with decrease in resistance of film indicating semiconductor behaviour. The TCR, activation energy, specific resistance of film was evaluated at 450 0C. Thickness of the film was measured by gravimetric method.

Keywords- Silar, CuO, Thickness, Activation energy, UV, IR.
Publication Details
Unique Identification Number - IJEDR2101028
Page Number(s) - 210-213
Pubished in - Volume 9 | Issue 1 | January 2021
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Chetan R. Yewale,  Mangesh B. Deore,  Upendra D. Lad,   "Preparation and Characterization of Copper Oxide Thin film by SILAR Method", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.9, Issue 1, pp.210-213, January 2021, Available at :http://www.ijedr.org/papers/IJEDR2101028.pdf
Share This Article


Article Preview

ISSN Details




DOI Details



Providing A digital object identifier by DOI
How to get DOI?

For Reviewer /Referral (RMS)

Important Links

NEWS & Conference

Digital Library

Our Social Link

© Copyright 2022 IJEDR.ORG All rights reserved