Low Cost Journal,International Peer Reviewed and Refereed Journals,Fast Paper Publication approved journal IJEDR(ISSN 2321-9939) apply for ugc care approved journal, UGC Approved Journal, ugc approved journal, ugc approved list of journal, ugc care journal, care journal, UGC-CARE list, New UGC-CARE Reference List, UGC CARE Journals, ugc care list of journal, ugc care list 2020, ugc care approved journal, ugc care list 2020, new ugc approved journal in 2020, Low cost research journal, Online international research journal, Peer-reviewed, and Refereed Journals, scholarly journals, impact factor 7.37 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool)
(International Peer Reviewed,Refereed, Indexed, Citation Open Access Journal)
ISSN: 2321-9939 | ESTD Year: 2013
Google Scholar Impact Factor- 7.37 (Year 2020)
Impact factor 7.37 (Calculate by google scholar and Semantic Scholar | AI-Powered Research Tool), Scholarly open access , Peer-reviewed, and Refereed, Multidisciplinary, Indexing in all major database & Metadata, Citation Generator, Digital Object Identifier(DOI) journal.

Current Issue

Call For Papers
March 2020

Volume 8 | Issue 1
Last Date : 29 March 2020

Review Results: Within 02-04 Days
Paper Publish: Within 02-04 Days
Impact Factor : 7.37

For Authors


Indexing Partner

Research Area


Facts & Figures

Visitor Statistics

Paper Details
Paper Title
Single Electron Transistor and its Simulation methods
  Sanjay. S ,  Pankaj Kumar Sinha

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this paper is to discuss about the basic physics of nanoelectronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron and focuses on some basic device characteristics like Orthodox theory ,tunneling effect ,Coulomb blockade ,Quantum Dot & ‘Coulomb staircase’ on which this Single electron transistor [SET] works. Various simulation methodology of the single electron transistor is discussed along with the tools available like Spice, SIMON, SECS etc . The physics underlying the operation of SET is explained, a brief history of its invention is presented.

Keywords- Quantum Dot; Columbic blockade; orthodox theory; SET; PSPICE; SIMON
Publication Details
Unique Identification Number - IJEDR1402100
Page Number(s) - 1907-1925
Pubished in - Volume 2 | Issue 2 | June 2014
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Sanjay. S ,  Pankaj Kumar Sinha,   "Single Electron Transistor and its Simulation methods", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.2, Issue 2, pp.1907-1925, June 2014, Available at :http://www.ijedr.org/papers/IJEDR1402100.pdf
Share This Article

Article Preview

ISSN Details

DOI Details

Providing A digital object identifier by DOI
How to get DOI?

For Reviewer /Referral (RMS)

Important Links

NEWS & Conference

Digital Library

Our Social Link

Open Access

This material is Open Knowledge
This material is Open Data
This material is Open Content
© Copyright 2020 IJEDR.ORG All rights reserved