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INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH
(International Peer Reviewed,Refereed, Indexed, Citation Open Access Journal)
ISSN: 2321-9939 | ESTD Year: 2013
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Paper Title
Single Electron Transistor and its Simulation methods
Authors
  Sanjay. S ,  Pankaj Kumar Sinha

Abstract
Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this paper is to discuss about the basic physics of nanoelectronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron and focuses on some basic device characteristics like Orthodox theory ,tunneling effect ,Coulomb blockade ,Quantum Dot & ‘Coulomb staircase’ on which this Single electron transistor [SET] works. Various simulation methodology of the single electron transistor is discussed along with the tools available like Spice, SIMON, SECS etc . The physics underlying the operation of SET is explained, a brief history of its invention is presented.

Keywords- Quantum Dot; Columbic blockade; orthodox theory; SET; PSPICE; SIMON
Publication Details
Unique Identification Number - IJEDR1402100
Page Number(s) - 1907-1925
Pubished in - Volume 2 | Issue 2 | June 2014
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Sanjay. S ,  Pankaj Kumar Sinha,   "Single Electron Transistor and its Simulation methods", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.2, Issue 2, pp.1907-1925, June 2014, Available at :http://www.ijedr.org/papers/IJEDR1402100.pdf
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