Low Cost Journal,Fast Paper Publication approved journal IJEDR(ISSN 2321-9939)
INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH
(International Peer Reviewed,Refereed, Indexed, Citation Open Access Journal)
ISSN: 2321-9939 | ESTD Year: 2013

Current Issue

For Authors

Archives

Indexing Partner

Research Area

LICENSE

Facts & Figures

Visitor Statistics


Paper Details
Paper Title
Design of Ultra Low Voltage SRAM in Corporating Novel Capacitor Based Boosted Word Line
Authors
  Md Atique Hassan ,  Kamil Hasan,  Nitin Sehgal

Abstract
Design techniques to realize input/output circuits used to access six-transistor- 6T Static Random Access Memory- SRAM cell based memory array in ultra low voltage applications. The main thrust of this work is to optimize access speed and power consumption- static & switching, of SRAM based memory circuit, especially of large width memories in ultra low voltage applications. A novel design for capacitor based boosting technique is introduced in the access as well as input/output circuits. Capacitor based boosting technique compensates for high capacitance of lengthy access routes, encountered in large capacity memories, and inadequate gate drive owing to supply power scaling. Other low voltage techniques, such as pre-decoding, are realized in conjunction with boosting capacitor technique to overcome the SRAM cell’s variations and thus achieve fast, low power SRAM operation .The capacitor based boosting technique also reduces chip area occupancy by doing away with large inverter circuits required to drive large capacitance access paths.

Keywords- path ,low power ,multi stage decoding ,voltage boosting
Publication Details
Unique Identification Number - IJEDR1602322
Page Number(s) - 1840-1842
Pubished in - Volume 4 | Issue 2 | June 2016
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)
Cite this Article
  Md Atique Hassan ,  Kamil Hasan,  Nitin Sehgal,   "Design of Ultra Low Voltage SRAM in Corporating Novel Capacitor Based Boosted Word Line", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.4, Issue 2, pp.1840-1842, June 2016, Available at :http://www.ijedr.org/papers/IJEDR1602322.pdf
Share This Article


Article Preview

ISSN Details



DOI Details



Providing A digital object identifier by DOI
How to get DOI?

For Reviewer /Referral (RMS)

Important Links

NEWS & Conference

Digital Library

IJEDR RMS

Our Social Link

Open Access

This material is Open Knowledge
This material is Open Data
This material is Open Content
© Copyright 2019 IJEDR.ORG All rights reserved