DESIGN OF SCHMITT TRIGGER USING FINFET

  Arul Selvi.V,  Divya.A,  Krithiga.K.R,  Rajat Kumar Dwibedi

The leakage power dissipation has become each of the foremost dominant factors in total power consumption and nonetheless a challenge for the VLSI designers because it doubles every year in keeping with Moore‟s law, leakage power consumption might dominate total power consumption. As leakage current goes to be a limiting issue for consecutive thinning out of transistors. Owing to the smaller feature sizes in nm technologies, shorter channel lengths cause sub threshold current to extend once the semiconductor device is within the off state. The lower sub threshold voltage offers rise to magnified sub threshold current furthermore, as a result of transistors cannot be converted fully. In order to reduce the leakage current we apply the FINFET technology with MTCMOS technique. During this paper, we tend to propose a brand new leakage reduction technique, named “Dual sleep techniques”, “Variable body biasing” which might be applied to general logic circuits furthermore as memory.

Keywords- MTCMOS, FINFET, Schmitt trigger, power gating techniques, sleep transistor.

Unique Identification Number - IJEDR1701118
Page Number(s) - 741-747
Pubished in - Volume 5 | Issue 1 | March 2017
DOI (Digital Object Identifier) -   
Publisher - IJEDR (ISSN - 2321-9939)

  Arul Selvi.V,  Divya.A,  Krithiga.K.R,  Rajat Kumar Dwibedi,   "DESIGN OF SCHMITT TRIGGER USING FINFET", International Journal of Engineering Development and Research (IJEDR), ISSN:2321-9939, Volume.5, Issue 1, pp.741-747, March 2017, Available at :http://www.ijedr.org/papers/IJEDR1701118.pdf